Renesas Electronics America HSG1002VE-TL-E

HSG1002VE-TL-E picture photo
Mfg. Part Number
HSG1002VE-TL-E
Manufacturer
Product Category
RF Transistors (BJT)
Brief Description
IC AMP HBT SIGE 38GHZ MFPAK-4
Datasheet Download
HSG1002VE-TL-E.pdf
Availability of HSG1002VE-TL-E

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
N/A
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of HSG1002VE-TL-E, we specialize in Renesas Electronics America all series electronic components. HSG1002VE-TL-E can be shipped within 24 hours after order. If you have any demands for HSG1002VE-TL-E, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
HSG1002VE-TL-E Order Process
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Specifications of HSG1002VE-TL-E
Internal Part NumberEIS-HSG1002VE-TL-E
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Standard Package10,000
Category Discrete Semiconductor Products
FamilyRF Transistors (BJT)
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.5V
Frequency - Transition38GHz
Noise Figure (dB Typ @ f)0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain8dB ~ 19.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Mounting TypeSurface Mount
Package / Case4-SMD, Gull Wing
Supplier Device Package4-MFPAK
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)HSG1002VE-TL-E
Related LinksHSG1002, HSG1002VE-TL-E Datasheet, Renesas Electronics America Distributor
HSG1002VE-TL-E Details Description
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