Infineon Technologies IPB021N06N3 G

IPB021N06N3 G picture photo
Mfg. Part Number
IPB021N06N3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 60V 120A TO263-3
Datasheet Download
IPB021N06N3 G.pdf
Availability of IPB021N06N3 G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of IPB021N06N3 G, we specialize in Infineon Technologies all series electronic components. IPB021N06N3 G can be shipped within 24 hours after order. If you have any demands for IPB021N06N3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPB021N06N3 G Order Process
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Specifications of IPB021N06N3 G
Internal Part NumberEIS-IPB021N06N3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 26/Jul/2012
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 196µA
Gate Charge (Qg) @ Vgs275nC @ 10V
Input Capacitance (Ciss) @ Vds23000pF @ 30V
Power - Max250W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-2
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPB021N06N3 G
Related LinksIPB021, IPB021N06N3 G Datasheet, Infineon Technologies Distributor
IPB021N06N3 G Details Description
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