Infineon Technologies IPD12CNE8N G

IPD12CNE8N G picture photo
Mfg. Part Number
IPD12CNE8N G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 85V 67A TO252-3
Datasheet Download
IPD12CNE8N G.pdf
Availability of IPD12CNE8N G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of IPD12CNE8N G, we specialize in Infineon Technologies all series electronic components. IPD12CNE8N G can be shipped within 24 hours after order. If you have any demands for IPD12CNE8N G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPD12CNE8N G Order Process
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Specifications of IPD12CNE8N G
Internal Part NumberEIS-IPD12CNE8N G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 11/Dec/2009
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Rds On (Max) @ Id, Vgs12.4 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) @ Vgs64nC @ 10V
Input Capacitance (Ciss) @ Vds4340pF @ 40V
Power - Max125W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD12CNE8N G
Related LinksIPD12C, IPD12CNE8N G Datasheet, Infineon Technologies Distributor
IPD12CNE8N G Details Description
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