Infineon Technologies IPD180N10N3 G

IPD180N10N3 G picture photo
Mfg. Part Number
IPD180N10N3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 43A TO252-3
Datasheet Download
IPD180N10N3 G.pdf
Availability of IPD180N10N3 G

Available Quantity

12520 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.30000
Our Price
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EIS Components is the stocking Distributor of IPD180N10N3 G, we specialize in Infineon Technologies all series electronic components. IPD180N10N3 G can be shipped within 24 hours after order. If you have any demands for IPD180N10N3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPD180N10N3 G Order Process
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Specifications of IPD180N10N3 G
Internal Part NumberEIS-IPD180N10N3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Rds On (Max) @ Id, Vgs18 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id3.5V @ 33µA
Gate Charge (Qg) @ Vgs25nC @ 10V
Input Capacitance (Ciss) @ Vds1800pF @ 50V
Power - Max71W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD180N10N3 G
Related LinksIPD180, IPD180N10N3 G Datasheet, Infineon Technologies Distributor
IPD180N10N3 G Details Description
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