Infineon Technologies IPI086N10N3 G

IPI086N10N3 G picture photo
Mfg. Part Number
IPI086N10N3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 80A TO262-3
Datasheet Download
IPI086N10N3 G.pdf
Availability of IPI086N10N3 G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.61500
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of IPI086N10N3 G, we specialize in Infineon Technologies all series electronic components. IPI086N10N3 G can be shipped within 24 hours after order. If you have any demands for IPI086N10N3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPI086N10N3 G Order Process
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Specifications of IPI086N10N3 G
Internal Part NumberEIS-IPI086N10N3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package500
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.6 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 75µA
Gate Charge (Qg) @ Vgs55nC @ 10V
Input Capacitance (Ciss) @ Vds3980pF @ 50V
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackagePG-TO262-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPI086N10N3 G
Related LinksIPI086, IPI086N10N3 G Datasheet, Infineon Technologies Distributor
IPI086N10N3 G Details Description
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