Vishay/Siliconix IRF510
- Mfg. Part Number
- IRF510
- Manufacturer
- Vishay/Siliconix
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 100V 5.6A TO-220AB
- Datasheet Download
- IRF510.pdf
Availability of IRF510
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 1.42800
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IRF510, we specialize in Vishay/Siliconix all series electronic components. IRF510 can be shipped within 24 hours after order. If you have any demands for IRF510, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IRF510 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IRF510
| Internal Part Number | EIS-IRF510 | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| PCN Obsolescence/ EOL | SIL-018-2015-Rev-0 20/May/2015 | |
| Standard Package | 1,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 3.4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 180pF @ 25V | |
| Power - Max | 43W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IRF510 | |
| Related Links | IRF, IRF510 Datasheet, Vishay/Siliconix Distributor | |
IRF510 Details Description
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