Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-IRFHM830DTRPBF | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below | |
| Design Resources | IRFHM830DTR2PBF Saber Model IRFHM830DTR2PBF Spice Model | |
| PCN Design/Specification | Gate Wire Size Update 16/Dec/2014 | |
| PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 Additional Assembly Site 10/Jul/2014 Assembly Site Retraction 01/Jul/2015 Assembly Site Revision 2 01/Jul/2015 | |
| PCN Packaging | Package Drawing Update 19/Aug/2015 | |
| Standard Package | 4,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | HEXFET® | |
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA | |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1797pF @ 25V | |
| Power - Max | 2.8W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VQFN Exposed Pad | |
| Supplier Device Package | PQFN (3x3) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IRFHM830DTRPBF | |
| Related Links | IRFHM83, IRFHM830DTRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor | |
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