International Rectifier (Infineon Technologies Americas Corp.) IRFR1018ETRRPBF

IRFR1018ETRRPBF picture photo
Mfg. Part Number
IRFR1018ETRRPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 60V 79A DPAK
Datasheet Download
IRFR1018ETRRPBF.pdf
Availability of IRFR1018ETRRPBF

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of IRFR1018ETRRPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRFR1018ETRRPBF can be shipped within 24 hours after order. If you have any demands for IRFR1018ETRRPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRFR1018ETRRPBF Order Process
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Specifications of IRFR1018ETRRPBF
Internal Part NumberEIS-IRFR1018ETRRPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
PCN Obsolescence/ EOLMultiple Devices 25/Apr/2014
PCN Assembly/OriginMosfet Backend Wafer Processing 23/Oct/2013
Standard Package6,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs8.4 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) @ Vgs69nC @ 10V
Input Capacitance (Ciss) @ Vds2290pF @ 50V
Power - Max110W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRFR1018ETRRPBF
Related LinksIRFR101, IRFR1018ETRRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRFR1018ETRRPBF Details Description
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