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International Rectifier (Infineon Technologies Americas Corp.) IRLR8113TRPBF

IRLR8113TRPBF picture photo
Mfg. Part Number
IRLR8113TRPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 30V 94A DPAK
Datasheet Download
IRLR8113TRPBF.pdf
Availability of IRLR8113TRPBF

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of IRLR8113TRPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRLR8113TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR8113TRPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRLR8113TRPBF Order Process
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Specifications of IRLR8113TRPBF
Internal Part NumberEIS-IRLR8113TRPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Discrete Power MOSFETs 40V and Below
PCN Obsolescence/ EOLMultiple Devices 25/Apr/2014
PCN Assembly/OriginBackend Wafer Transfer 23/Oct/2013
Standard Package2,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C94A (Tc)
Rds On (Max) @ Id, Vgs6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) @ Vgs32nC @ 4.5V
Input Capacitance (Ciss) @ Vds2920pF @ 15V
Power - Max89W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRLR8113TRPBF
Related LinksIRLR81, IRLR8113TRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRLR8113TRPBF Details Description
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