IXYS Corporation IXTQ102N15T
- Mfg. Part Number
- IXTQ102N15T
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 150V 102A TO-3P
- Datasheet Download
- IXTQ102N15T.pdf
Availability of IXTQ102N15T
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXTQ102N15T, we specialize in IXYS Corporation all series electronic components. IXTQ102N15T can be shipped within 24 hours after order. If you have any demands for IXTQ102N15T, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXTQ102N15T Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXTQ102N15T
| Internal Part Number | EIS-IXTQ102N15T | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 30 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) | |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 87nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 5220pF @ 25V | |
| Power - Max | 455W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3P | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXTQ102N15T | |
| Related Links | IXTQ1, IXTQ102N15T Datasheet, IXYS Corporation Distributor | |
IXTQ102N15T Details Description
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