IXYS Corporation IXTU02N50D
- Mfg. Part Number
- IXTU02N50D
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 500V 0.2A TO-251
- Datasheet Download
- IXTU02N50D.pdf
Availability of IXTU02N50D
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 1.20400
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXTU02N50D, we specialize in IXYS Corporation all series electronic components. IXTU02N50D can be shipped within 24 hours after order. If you have any demands for IXTU02N50D, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXTU02N50D Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXTU02N50D
| Internal Part Number | EIS-IXTU02N50D | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 75 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Depletion Mode | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) | |
| Rds On (Max) @ Id, Vgs | 30 Ohm @ 50mA, 0V | |
| Vgs(th) (Max) @ Id | 5V @ 25µA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 120pF @ 25V | |
| Power - Max | 1.1W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Supplier Device Package | TO-251 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXTU02N50D | |
| Related Links | IXTU0, IXTU02N50D Datasheet, IXYS Corporation Distributor | |
IXTU02N50D Details Description
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