ON Semiconductor MJD112G

MJD112G picture photo
Mfg. Part Number
MJD112G
Manufacturer
Product Category
Transistors (BJT) - Single
Brief Description
TRANS NPN DARL 100V 2A DPAK
Datasheet Download
MJD112G.pdf
Availability of MJD112G

Available Quantity

7295 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.23817
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of MJD112G, we specialize in ON Semiconductor all series electronic components. MJD112G can be shipped within 24 hours after order. If you have any demands for MJD112G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
MJD112G Order Process
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Specifications of MJD112G
Internal Part NumberEIS-MJD112G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginQualification Multiple Devices 24/Sep/2013
Standard Package75
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single
Series-
PackagingTube
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)MJD112G
Related LinksMJD, MJD112G Datasheet, ON Semiconductor Distributor
MJD112G Details Description
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