Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-MT18VDDF6472DG-335G2 | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 100 | |
| Category | Memory Cards, Modules | |
| Family | Memory - Modules | |
| Series | - | |
| Memory Type | DDR SDRAM | |
| Memory Size | 512MB | |
| Speed | 333MT/s | |
| Package / Case | 184-DIMM | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | MT18VDDF6472DG-335G2 | |
| Related Links | MT18VDDF64, MT18VDDF6472DG-335G2 Datasheet, Micron Technology Distributor | |
![]() | IPBH6N03LA G | MOSFET N-CH 25V 50A TO-263 | datasheet.pdf | |
![]() | VJ1808A680JBBAT4X | CAP CER 68PF 100V NP0 1808 | datasheet.pdf | |
![]() | VE-251-CX-B1 | CONVERTER MOD DC/DC 12V 75W | datasheet.pdf | |
![]() | CDR34BP392BJZPAT | CAP CER 3900PF 100V 5% BP 1812 | datasheet.pdf | |
![]() | RNC60H1454DSBSL | RES 1.45M OHM 1/4W .5% AXIAL | datasheet.pdf | |
![]() | RWR89S4420FRB12 | RES 442 OHM 3W 1% WW AXIAL | datasheet.pdf | |
![]() | M55342H06B4E75RT5 | RES SMD 4.75K OHM 1% 0.15W 0705 | datasheet.pdf | |
![]() | MAX16046ATN+T | IC EEPROM PROG SYS MGR 56TQFN | datasheet.pdf | |
![]() | 0382100709 | Connector Barrier Block Strip 9 Circuit 0.563" (14.30mm) | datasheet.pdf | |
![]() | ECC30HETI | CONN EDGE HL .100 60POS | datasheet.pdf | |
![]() | HW13505400J0G | 508 TB SPR PLU MIDDLE | datasheet.pdf | |
![]() | 5441757 | BCP-500- 7 BK | datasheet.pdf |