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ON Semiconductor MUN2212T1G

MUN2212T1G picture photo
Mfg. Part Number
MUN2212T1G
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 338MW SC59
Datasheet Download
MUN2212T1G.pdf
Availability of MUN2212T1G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.01890
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of MUN2212T1G, we specialize in ON Semiconductor all series electronic components. MUN2212T1G can be shipped within 24 hours after order. If you have any demands for MUN2212T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
MUN2212T1G Order Process
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Specifications of MUN2212T1G
Internal Part NumberEIS-MUN2212T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationCopper Wire 29/Oct/2009
PCN Assembly/OriginWafer Source Addition 26/Nov/2014
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)22k
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max338mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)MUN2212T1G
Related LinksMUN22, MUN2212T1G Datasheet, ON Semiconductor Distributor
MUN2212T1G Details Description
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