Ship from: HONGKONG
								Date Code: Newest Date Code
								Manufacturer lead time 6 weeks
| Internal Part Number | EIS-NAND128W3A0BN6E | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| PCN Obsolescence/ EOL | NAND Flash Devices 22/Oct/2013 | |
| Standard Package | 96 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | - | |
| Packaging | Tray | |
| Format - Memory | FLASH | |
| Memory Type | FLASH - NAND | |
| Memory Size | 128M (16M x 8) | |
| Speed | - | |
| Interface | Parallel | |
| Voltage - Supply | 2.7 V ~ 3.6 V | |
| Operating Temperature | -40°C ~ 85°C | |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) | |
| Supplier Device Package | 48-TSOP | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | NAND128W3A0BN6E | |
| Related Links | NAND128, NAND128W3A0BN6E Datasheet, Micron Technology Distributor | |
|  | ERJ-2RKF1961X | RES SMD 1.96K OHM 1% 1/10W 0402 | datasheet.pdf | |
|  | PC817X7 | OPTOISOLATOR 5KV TRANS 4DIP | datasheet.pdf | |
|  | Q2027403 | KIT THYRISTOR TRIAC DESIGN | datasheet.pdf | |
|  | SI4112-D-GTR | IC SYNTHESIZER IF ONLY 24TSSOP | datasheet.pdf | |
|  | HCC26DRTI | CONN EDGECARD 52POS DIP .100 SLD | datasheet.pdf | |
|  | VE-BNB-EV-F3 | CONVERTER MOD DC/DC 95V 150W | datasheet.pdf | |
|  | RNC55H2491BSBSL | RES 2.49K OHM 1/8W .1% AXIAL | datasheet.pdf | |
|  | RNC50J6900BSRSL | RES 690 OHM 1/10W .1% AXIAL | datasheet.pdf | |
|  | CP12683_TINA2-D | LENS W/ HOLDER FOR CREE MX-6 | datasheet.pdf | |
|  | 16YXG680MEFCT78X20 | CAP ALUM 680UF 20% 16V RADIAL | datasheet.pdf | |
|  | Y0793107R790T9L | RES 107.79 OHM 0.6W 0.01% RADIAL | datasheet.pdf | |
|  | 0826611:I | TERM MARKER | datasheet.pdf |