ON Semiconductor NSTB1002DXV5T1G

NSTB1002DXV5T1G picture photo
Mfg. Part Number
NSTB1002DXV5T1G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS NPN PREBIAS/PNP 0.5W SOT55
Datasheet Download
NSTB1002DXV5T1G.pdf
Availability of NSTB1002DXV5T1G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.10850
Our Price
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EIS Components is the stocking Distributor of NSTB1002DXV5T1G, we specialize in ON Semiconductor all series electronic components. NSTB1002DXV5T1G can be shipped within 24 hours after order. If you have any demands for NSTB1002DXV5T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
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Specifications of NSTB1002DXV5T1G
Internal Part NumberEIS-NSTB1002DXV5T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationWire Bond 01/Dec/2010
PCN Assembly/OriginWafer Source Addition 26/Nov/2014
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA, 200mA
Voltage - Collector Emitter Breakdown (Max)50V, 40V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 100 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageSOT-553
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSTB1002DXV5T1G
Related LinksNSTB100, NSTB1002DXV5T1G Datasheet, ON Semiconductor Distributor
NSTB1002DXV5T1G Details Description
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