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ON Semiconductor NSVB123JPDXV6T1G

NSVB123JPDXV6T1G picture photo
Mfg. Part Number
NSVB123JPDXV6T1G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS PREBIAS NPN/PNP SOT563
Datasheet Download
NSVB123JPDXV6T1G.pdf
Availability of NSVB123JPDXV6T1G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.10230
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EIS Components is the stocking Distributor of NSVB123JPDXV6T1G, we specialize in ON Semiconductor all series electronic components. NSVB123JPDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSVB123JPDXV6T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
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Specifications of NSVB123JPDXV6T1G
Internal Part NumberEIS-NSVB123JPDXV6T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginAssembly/Test Site Transfer 06/Jan/2015
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSVB123JPDXV6T1G
Related LinksNSVB123J, NSVB123JPDXV6T1G Datasheet, ON Semiconductor Distributor
NSVB123JPDXV6T1G Details Description
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