ON Semiconductor NSVBC114EDXV6T1G

NSVBC114EDXV6T1G picture photo
Mfg. Part Number
NSVBC114EDXV6T1G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2NPN BIAS BIPOLAR SOT563
Datasheet Download
NSVBC114EDXV6T1G.pdf
Availability of NSVBC114EDXV6T1G

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.10230
Our Price
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EIS Components is the stocking Distributor of NSVBC114EDXV6T1G, we specialize in ON Semiconductor all series electronic components. NSVBC114EDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSVBC114EDXV6T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSVBC114EDXV6T1G Order Process
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Specifications of NSVBC114EDXV6T1G
Internal Part NumberEIS-NSVBC114EDXV6T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSVBC114EDXV6T1G
Related LinksNSVBC114, NSVBC114EDXV6T1G Datasheet, ON Semiconductor Distributor
NSVBC114EDXV6T1G Details Description
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