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ON Semiconductor NSVMMUN2212LT1G

NSVMMUN2212LT1G picture photo
Mfg. Part Number
NSVMMUN2212LT1G
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 0.246W SOT23
Datasheet Download
NSVMMUN2212LT1G.pdf
Availability of NSVMMUN2212LT1G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.05280
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of NSVMMUN2212LT1G, we specialize in ON Semiconductor all series electronic components. NSVMMUN2212LT1G can be shipped within 24 hours after order. If you have any demands for NSVMMUN2212LT1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSVMMUN2212LT1G Order Process
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Specifications of NSVMMUN2212LT1G
Internal Part NumberEIS-NSVMMUN2212LT1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationPd-Coated Cu Wire Update 23/Sep/2015
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)22k
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSVMMUN2212LT1G
Related LinksNSVMMUN, NSVMMUN2212LT1G Datasheet, ON Semiconductor Distributor
NSVMMUN2212LT1G Details Description
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