Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-RN1106MFV(TL3,T) | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | Transistors (BJT) - Single, Pre-Biased | |
Series | - | |
Packaging | Cut Tape (CT) | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) (Ohms) | 4.7k | |
Resistor - Emitter Base (R2) (Ohms) | 47k | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
Current - Collector Cutoff (Max) | 500nA | |
Frequency - Transition | - | |
Power - Max | 150mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-723 | |
Supplier Device Package | VESM | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | RN1106MFV(TL3,T) | |
Related Links | RN1106MF, RN1106MFV(TL3,T) Datasheet, Toshiba Semiconductor & Storage Distributor |
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