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Toshiba Semiconductor & Storage RN1106MFV(TL3,T)

RN1106MFV(TL3,T) picture photo
Mfg. Part Number
RN1106MFV(TL3,T)
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 0.15W VESM
Datasheet Download
RN1106MFV(TL3,T).pdf
Availability of RN1106MFV(TL3,T)

Available Quantity

23124 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.03682
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1106MFV(TL3,T), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1106MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1106MFV(TL3,T), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1106MFV(TL3,T) Order Process
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Specifications of RN1106MFV(TL3,T)
Internal Part NumberEIS-RN1106MFV(TL3,T)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingCut Tape (CT)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1106MFV(TL3,T)
Related LinksRN1106MF, RN1106MFV(TL3,T) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1106MFV(TL3,T) Details Description
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