Toshiba Semiconductor & Storage RN1110MFV,L3F
- Mfg. Part Number
- RN1110MFV,L3F
- Manufacturer
- Toshiba Semiconductor & Storage
- Product Category
- Transistors (BJT) - Single, Pre-Biased
- Brief Description
- TRANS PREBIAS NPN 50V 0.15W VESM
- Datasheet Download
- RN1110MFV,L3F.pdf
Availability of RN1110MFV,L3F
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 0.03400
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of RN1110MFV,L3F, we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1110MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1110MFV,L3F, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- RN1110MFV,L3F Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
RN1110MFV,L3F
| Internal Part Number | EIS-RN1110MFV,L3F | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 8,000 | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors (BJT) - Single, Pre-Biased | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | RN1110MFV,L3F | |
| Related Links | RN1110, RN1110MFV,L3F Datasheet, Toshiba Semiconductor & Storage Distributor | |
RN1110MFV,L3F Details Description
Related parts for RN1110MFV,L3F
 | QED123 | EMITTER IR 880NM 100MA RADIAL | datasheet.pdf | |
 | A22-TA-02A | SWITCH PUSH DPST-NC 10A 110V | datasheet.pdf | |
| 1590AGY | BOX ALUM GRAY 3.64"L X 1.52"W | datasheet.pdf | |
| OSTTS14A15C | TERM BLOCK PLUG 14POS 7.5MM | datasheet.pdf | |
| AFD51-20-39SN-6233 | CONN HSG RCPT STRGHT 39POS SKT | datasheet.pdf | |
| U811SD9V3GE | SWITCH PUSHBUTTON SPDT 1A 120V | datasheet.pdf | |
| 89232-415HLF | HEADER BERGSTIK | datasheet.pdf | |
| ATS-01C-123-C2-R0 | HEATSINK 50X50X20MM XCUT T766 | datasheet.pdf | |
| FCC17C37SA290 | D-Sub Connector Receptacle, Female Sockets 37 Position Through Hole, Right Angle Solder | datasheet.pdf | |
 | ADM00556 | EVAL BOARD MCP1642 AA BATT-USB | datasheet.pdf | |
| TVP00DZ-15-19SC-LC | TV 19C 19#20 SKT RECP | datasheet.pdf | |
 | XCR5032C-10VQ44C | EE PLD, 10ns, 32-Cell, CMOS, PQFP44 IC | datasheet.pdf |