Toshiba Semiconductor & Storage RN1110MFV,L3F

RN1110MFV,L3F picture photo
Mfg. Part Number
RN1110MFV,L3F
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 50V 0.15W VESM
Datasheet Download
RN1110MFV,L3F.pdf
Availability of RN1110MFV,L3F

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.03400
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1110MFV,L3F, we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1110MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1110MFV,L3F, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1110MFV,L3F Order Process
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Specifications of RN1110MFV,L3F
Internal Part NumberEIS-RN1110MFV,L3F
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package8,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1110MFV,L3F
Related LinksRN1110, RN1110MFV,L3F Datasheet, Toshiba Semiconductor & Storage Distributor
RN1110MFV,L3F Details Description
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