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Toshiba Semiconductor & Storage RN1112(T5L,F,T)

RN1112(T5L,F,T) picture photo
Mfg. Part Number
RN1112(T5L,F,T)
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 0.1W SSM
Datasheet Download
RN1112(T5L,F,T).pdf
Availability of RN1112(T5L,F,T)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
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Our Price
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EIS Components is the stocking Distributor of RN1112(T5L,F,T), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1112(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1112(T5L,F,T), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1112(T5L,F,T) Order Process
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Specifications of RN1112(T5L,F,T)
Internal Part NumberEIS-RN1112(T5L,F,T)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingCut Tape (CT)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1112(T5L,F,T)
Related LinksRN1112(, RN1112(T5L,F,T) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1112(T5L,F,T) Details Description
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