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Toshiba Semiconductor & Storage RN1112MFV(TPL3)

RN1112MFV(TPL3) picture photo
Mfg. Part Number
RN1112MFV(TPL3)
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 150MW VESM
Datasheet Download
RN1112MFV(TPL3).pdf
Availability of RN1112MFV(TPL3)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.04200
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1112MFV(TPL3), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1112MFV(TPL3) can be shipped within 24 hours after order. If you have any demands for RN1112MFV(TPL3), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1112MFV(TPL3) Order Process
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Specifications of RN1112MFV(TPL3)
Internal Part NumberEIS-RN1112MFV(TPL3)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package8,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1112MFV(TPL3)
Related LinksRN1112M, RN1112MFV(TPL3) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1112MFV(TPL3) Details Description
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