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Toshiba Semiconductor & Storage RN1961(TE85L,F)

RN1961(TE85L,F) picture photo
Mfg. Part Number
RN1961(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2NPN PREBIAS 0.2W US6
Datasheet Download
RN1961(TE85L,F).pdf
Availability of RN1961(TE85L,F)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.05376
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EIS Components is the stocking Distributor of RN1961(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1961(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1961(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1961(TE85L,F) Order Process
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Specifications of RN1961(TE85L,F)
Internal Part NumberEIS-RN1961(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1961(TE85L,F)
Related LinksRN1961(, RN1961(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1961(TE85L,F) Details Description
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