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Toshiba Semiconductor & Storage RN2610(TE85L,F)

RN2610(TE85L,F) picture photo
Mfg. Part Number
RN2610(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2PNP PREBIAS 0.3W SM6
Datasheet Download
RN2610(TE85L,F).pdf
Availability of RN2610(TE85L,F)

Available Quantity

8020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.05376
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN2610(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN2610(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2610(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN2610(TE85L,F) Order Process
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Specifications of RN2610(TE85L,F)
Internal Part NumberEIS-RN2610(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN2610(TE85L,F)
Related LinksRN2610(, RN2610(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN2610(TE85L,F) Details Description
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