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Toshiba Semiconductor & Storage RN2965FE(TE85L,F)

RN2965FE(TE85L,F) picture photo
Mfg. Part Number
RN2965FE(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2PNP PREBIAS 0.1W ES6
Datasheet Download
RN2965FE(TE85L,F).pdf
Availability of RN2965FE(TE85L,F)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.06200
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN2965FE(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN2965FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2965FE(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN2965FE(TE85L,F) Order Process
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Specifications of RN2965FE(TE85L,F)
Internal Part NumberEIS-RN2965FE(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN2965FE(TE85L,F)
Related LinksRN2965FE, RN2965FE(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN2965FE(TE85L,F) Details Description
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