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Toshiba Semiconductor & Storage RN47A3JE(TE85L,F)

RN47A3JE(TE85L,F) picture photo
Mfg. Part Number
RN47A3JE(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS NPN/PNP PREBIAS 0.1W ESV
Datasheet Download
RN47A3JE(TE85L,F).pdf
Availability of RN47A3JE(TE85L,F)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.08400
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN47A3JE(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN47A3JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN47A3JE(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
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Specifications of RN47A3JE(TE85L,F)
Internal Part NumberEIS-RN47A3JE(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN47A3JE(TE85L,F)
Related LinksRN47A3JE, RN47A3JE(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN47A3JE(TE85L,F) Details Description
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