Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-RQ3E100BNTB | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Cut Tape (CT) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) | |
Rds On (Max) @ Id, Vgs | 10.4 mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
Gate Charge (Qg) @ Vgs | 22nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1100pF @ 15V | |
Power - Max | 2W | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerVDFN | |
Supplier Device Package | 8-HSMT (3.2x3) | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | RQ3E100BNTB | |
Related Links | RQ3E1, RQ3E100BNTB Datasheet, Rohm Semiconductor Distributor |
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