International Rectifier (Infineon Technologies Americas Corp.) SI4435DYTRPBF

SI4435DYTRPBF picture photo
Mfg. Part Number
SI4435DYTRPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET P-CH 30V 8A 8-SOIC
Datasheet Download
SI4435DYTRPBF.pdf
Availability of SI4435DYTRPBF

Available Quantity

17020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.31125
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EIS Components is the stocking Distributor of SI4435DYTRPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. SI4435DYTRPBF can be shipped within 24 hours after order. If you have any demands for SI4435DYTRPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI4435DYTRPBF Order Process
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Specifications of SI4435DYTRPBF
Internal Part NumberEIS-SI4435DYTRPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Discrete Power MOSFETs 40V and Below
PCN Assembly/OriginWafer Source Update 11/Dec/2014
PCN PackagingPackage Drawing Update 19/Aug/2015
Standard Package4,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) @ Vgs60nC @ 10V
Input Capacitance (Ciss) @ Vds2320pF @ 15V
Power - Max2.5W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI4435DYTRPBF
Related LinksSI4435, SI4435DYTRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
SI4435DYTRPBF Details Description
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