Vishay/Siliconix SI4966DY-T1-GE3

SI4966DY-T1-GE3 picture photo
Mfg. Part Number
SI4966DY-T1-GE3
Manufacturer
Product Category
FETs - Arrays
Brief Description
MOSFET 2N-CH 20V 8SOIC
Datasheet Download
SI4966DY-T1-GE3.pdf
Availability of SI4966DY-T1-GE3

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.94500
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of SI4966DY-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI4966DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4966DY-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI4966DY-T1-GE3 Order Process
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Specifications of SI4966DY-T1-GE3
Internal Part NumberEIS-SI4966DY-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Arrays
SeriesTrenchFET®
PackagingTape & Reel (TR)
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) @ Vgs50nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max2W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI4966DY-T1-GE3
Related LinksSI4966D, SI4966DY-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI4966DY-T1-GE3 Details Description
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