Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-SIE812DF-T1-GE3 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 3,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | TrenchFET® | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) @ Vgs | 170nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 8300pF @ 20V | |
Power - Max | 125W | |
Mounting Type | Surface Mount | |
Package / Case | 10-PolarPAK® (L) | |
Supplier Device Package | 10-PolarPAK® (L) | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | SIE812DF-T1-GE3 | |
Related Links | SIE812D, SIE812DF-T1-GE3 Datasheet, Vishay/Siliconix Distributor |
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