Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-SISS23DN-T1-GE3 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Featured Product | 12 V and 20 V P-Channel Gen III MOSFETs | |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | TrenchFET® | |
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 20A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 8840pF @ 15V | |
| Power - Max | 57W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Supplier Device Package | PowerPAK® 1212-8S | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | SISS23DN-T1-GE3 | |
| Related Links | SISS23D, SISS23DN-T1-GE3 Datasheet, Vishay/Siliconix Distributor | |
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