Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-SSM3J56MFV,L3F(T | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Product Training Modules | General Purpose Discrete Items | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Cut Tape (CT) | |
FET Type | MOSFET P-Channel, Metal Oxide | |
FET Feature | Logic Level Gate, 1.2V Drive | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) | |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 800mA, 4.5V | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 100pF @ 10V | |
Power - Max | 150mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-723 | |
Supplier Device Package | VESM | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | SSM3J56MFV,L3F(T | |
Related Links | SSM3J56M, SSM3J56MFV,L3F(T Datasheet, Toshiba Semiconductor & Storage Distributor |
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