Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-TC58BVG0S3HBAI6 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 96 | |
Category | Integrated Circuits (ICs) | |
Family | Memory | |
Series | Benand™ | |
Packaging | Tray | |
Format - Memory | EEPROMs - Serial | |
Memory Type | EEPROM - NAND | |
Memory Size | 1G (128M x 8) | |
Speed | 25ns | |
Interface | Parallel | |
Voltage - Supply | 2.7 V ~ 3.6 V | |
Operating Temperature | -40°C ~ 85°C | |
Package / Case | 67-VFBGA | |
Supplier Device Package | 67-VFBGA (6.5x8) | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | TC58BVG0S3HBAI6 | |
Related Links | TC58BVG, TC58BVG0S3HBAI6 Datasheet, Toshiba Semiconductor & Storage Distributor |
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