Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-TC58BYG1S3HBAI6 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 96 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | Benand™ | |
| Packaging | Tray | |
| Format - Memory | EEPROMs - Serial | |
| Memory Type | EEPROM - NAND | |
| Memory Size | 2G (256M x 8) | |
| Speed | 25ns | |
| Interface | Parallel | |
| Voltage - Supply | 1.7 V ~ 1.95 V | |
| Operating Temperature | -40°C ~ 85°C | |
| Package / Case | 67-VFBGA | |
| Supplier Device Package | 67-VFBGA (6.5x8) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | TC58BYG1S3HBAI6 | |
| Related Links | TC58BYG, TC58BYG1S3HBAI6 Datasheet, Toshiba Semiconductor & Storage Distributor | |
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