Toshiba Semiconductor & Storage TJ11A10M3,S5Q(M
- Mfg. Part Number
- TJ11A10M3,S5Q(M
- Manufacturer
- Toshiba Semiconductor & Storage
- Product Category
- FETs - Single
- Brief Description
- MOSFET P-CH 100V 11A TO220SIS-3
- Datasheet Download
- TJ11A10M3,S5Q(M.pdf
Availability of TJ11A10M3,S5Q(M
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 0.87700
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of TJ11A10M3,S5Q(M, we specialize in Toshiba Semiconductor & Storage all series electronic components. TJ11A10M3,S5Q(M can be shipped within 24 hours after order. If you have any demands for TJ11A10M3,S5Q(M, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- TJ11A10M3,S5Q(M Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
TJ11A10M3,S5Q(M
| Internal Part Number | EIS-TJ11A10M3,S5Q(M | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 5.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3200pF @ 10V | |
| Power - Max | 24W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Supplier Device Package | TO-220SIS | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | TJ11A10M3,S5Q(M | |
| Related Links | TJ11A10, TJ11A10M3,S5Q(M Datasheet, Toshiba Semiconductor & Storage Distributor | |
TJ11A10M3,S5Q(M Details Description
Related parts for TJ11A10M3,S5Q(M
 | FDD6N25TM | MOSFET N-CH 250V 4.4A DPAK | datasheet.pdf | |
 | G7L-2A-TUB-J-CB-AC50 | RELAY GEN PURPOSE DPST 25A 50V | datasheet.pdf | |
 | 169475-1 | MINI CERTI-LOK III+ | datasheet.pdf | |
 | MMU01020C1501FB300 | RES SMD 1.5K OHM 1% 0.3W 0102 | datasheet.pdf | |
| CA12096_MINNIE-W | REFLECTOR 35MM RND 15.8MM | datasheet.pdf | |
| M39003/01-8241/TR | CAP TANT 0.15UF 5% 75V AXIAL | datasheet.pdf | |
 | MAX3206EEWL+T | TVS DIODE SMD | datasheet.pdf | |
| R0.5D12-0512/HP | 0.5W DC/DC-CONVERTER ECONOLINE | datasheet.pdf | |
 | LTR18EZPF5R60 | RES SMD 5.6 OHM 3/4W 1206 WIDE | datasheet.pdf | |
 | WMBC4B | REPLACEMENT REAR COVER | datasheet.pdf | |
 | 2-1634689-6 | BOX HEADER RIGHT ANGLE 26 WAY | datasheet.pdf | |
 | ZXTDA1M832 | DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION IC | datasheet.pdf |