Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-TK62J60W,S1VQ | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 25 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Tube | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Super Junction | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 61.8A (Ta) | |
Rds On (Max) @ Id, Vgs | 38 mOhm @ 30.9A, 10V | |
Vgs(th) (Max) @ Id | 3.7V @ 3.1mA | |
Gate Charge (Qg) @ Vgs | 180nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 6500pF @ 300V | |
Power - Max | 400W | |
Mounting Type | Through Hole | |
Package / Case | TO-3P-3, SC-65-3 | |
Supplier Device Package | TO-3P(N) | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | TK62J60W,S1VQ | |
Related Links | TK62J6, TK62J60W,S1VQ Datasheet, Toshiba Semiconductor & Storage Distributor |
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