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Toshiba Semiconductor & Storage TPN4R712MD,L1Q

TPN4R712MD,L1Q picture photo
Mfg. Part Number
TPN4R712MD,L1Q
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET P-CH 20V 36A 8TSON ADV
Datasheet Download
TPN4R712MD,L1Q.pdf
Availability of TPN4R712MD,L1Q

Available Quantity

10020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.23400
Our Price
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EIS Components is the stocking Distributor of TPN4R712MD,L1Q, we specialize in Toshiba Semiconductor & Storage all series electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
TPN4R712MD,L1Q Order Process
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Specifications of TPN4R712MD,L1Q
Internal Part NumberEIS-TPN4R712MD,L1Q
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Featured ProductUMOS-VI Series Power MOSFETs
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Rds On (Max) @ Id, Vgs4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) @ Vgs65nC @ 5V
Input Capacitance (Ciss) @ Vds4300pF @ 10V
Power - Max42W
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-TSON Advance
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)TPN4R712MD,L1Q
Related LinksTPN4R71, TPN4R712MD,L1Q Datasheet, Toshiba Semiconductor & Storage Distributor
TPN4R712MD,L1Q Details Description
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