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Vishay Semiconductor/Diodes Division VS-GT100TP120N

VS-GT100TP120N picture photo
Mfg. Part Number
VS-GT100TP120N
Manufacturer
Product Category
IGBTs - Modules
Brief Description
IGBT 1200V 180A 652W INT-A-PAK
Datasheet Download
VS-GT100TP120N.pdf
Availability of VS-GT100TP120N

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 238.18125
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of VS-GT100TP120N, we specialize in Vishay Semiconductor/Diodes Division all series electronic components. VS-GT100TP120N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP120N, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
VS-GT100TP120N Order Process
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Specifications of VS-GT100TP120N
Internal Part NumberEIS-VS-GT100TP120N
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN PackagingPowerModules_2DBarcode Mar/2015
Standard Package24
Category Discrete Semiconductor Products
FamilyIGBTs - Modules
Series-
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)180A
Power - Max652W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 100A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce12.8nF @ 30V
InputStandard
NTC ThermistorNo
Mounting TypeChassis Mount
Package / CaseINT-A-PAK (3 + 4)
Supplier Device PackageINT-A-PAK
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)VS-GT100TP120N
Related LinksVS-GT10, VS-GT100TP120N Datasheet, Vishay Semiconductor/Diodes Division Distributor
VS-GT100TP120N Details Description
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