Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-2SK3868(Q,M) | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
Standard Package | 50 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Bulk | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 500V | |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 2.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) @ Vgs | 16nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 550pF @ 25V | |
Power - Max | 35W | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 Full Pack | |
Supplier Device Package | TO-220SIS | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | 2SK3868(Q,M) | |
Related Links | 2SK386, 2SK3868(Q,M) Datasheet, Toshiba Semiconductor & Storage Distributor |
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