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Toshiba Semiconductor & Storage HN3C10FUTE85LF

HN3C10FUTE85LF picture photo
Mfg. Part Number
HN3C10FUTE85LF
Manufacturer
Product Category
RF Transistors (BJT)
Brief Description
TRANSISTOR NPN US6
Datasheet Download
HN3C10FUTE85LF.pdf
Availability of HN3C10FUTE85LF

Available Quantity

7886 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.21700
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of HN3C10FUTE85LF, we specialize in Toshiba Semiconductor & Storage all series electronic components. HN3C10FUTE85LF can be shipped within 24 hours after order. If you have any demands for HN3C10FUTE85LF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
HN3C10FUTE85LF Order Process
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Specifications of HN3C10FUTE85LF
Internal Part NumberEIS-HN3C10FUTE85LF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyRF Transistors (BJT)
Series-
PackagingCut Tape (CT)
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Gain11.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 20mA, 10V
Current - Collector (Ic) (Max)80mA
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)HN3C10FUTE85LF
Related LinksHN3C10F, HN3C10FUTE85LF Datasheet, Toshiba Semiconductor & Storage Distributor
HN3C10FUTE85LF Details Description
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