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Toshiba Semiconductor & Storage HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F picture photo
Mfg. Part Number
HN3C51F-GR(TE85L,F
Manufacturer
Product Category
Transistors (BJT) - Arrays
Brief Description
TRANS 2NPN 120V 0.1A SM6
Datasheet Download
HN3C51F-GR(TE85L,F.pdf
Availability of HN3C51F-GR(TE85L,F

Available Quantity

7931 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.13875
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of HN3C51F-GR(TE85L,F, we specialize in Toshiba Semiconductor & Storage all series electronic components. HN3C51F-GR(TE85L,F can be shipped within 24 hours after order. If you have any demands for HN3C51F-GR(TE85L,F, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
HN3C51F-GR(TE85L,F Order Process
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Specifications of HN3C51F-GR(TE85L,F
Internal Part NumberEIS-HN3C51F-GR(TE85L,F
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays
Series-
PackagingCut Tape (CT)
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max300mW
Frequency - Transition100MHz
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)HN3C51F-GR(TE85L,F
Related LinksHN3C51F-G, HN3C51F-GR(TE85L,F Datasheet, Toshiba Semiconductor & Storage Distributor
HN3C51F-GR(TE85L,F Details Description
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