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Infineon Technologies IPD110N12N3GATMA1

IPD110N12N3GATMA1 picture photo
Mfg. Part Number
IPD110N12N3GATMA1
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 120V 75A TO252-3
Datasheet Download
IPD110N12N3GATMA1.pdf
Availability of IPD110N12N3GATMA1

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.69492
Our Price
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EIS Components is the stocking Distributor of IPD110N12N3GATMA1, we specialize in Infineon Technologies all series electronic components. IPD110N12N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD110N12N3GATMA1, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPD110N12N3GATMA1 Order Process
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Specifications of IPD110N12N3GATMA1
Internal Part NumberEIS-IPD110N12N3GATMA1
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs11 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3V @ 83µA (Typ)
Gate Charge (Qg) @ Vgs65nC @ 10V
Input Capacitance (Ciss) @ Vds4310pF @ 60V
Power - Max136W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD110N12N3GATMA1
Related LinksIPD110N1, IPD110N12N3GATMA1 Datasheet, Infineon Technologies Distributor
IPD110N12N3GATMA1 Details Description
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