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Infineon Technologies IPD65R1K4CFDBTMA1

IPD65R1K4CFDBTMA1 picture photo
Mfg. Part Number
IPD65R1K4CFDBTMA1
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 650V 2.8A TO-252
Datasheet Download
IPD65R1K4CFDBTMA1.pdf
Availability of IPD65R1K4CFDBTMA1

Available Quantity

7514 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.44206
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EIS Components is the stocking Distributor of IPD65R1K4CFDBTMA1, we specialize in Infineon Technologies all series electronic components. IPD65R1K4CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R1K4CFDBTMA1, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPD65R1K4CFDBTMA1 Order Process
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Specifications of IPD65R1K4CFDBTMA1
Internal Part NumberEIS-IPD65R1K4CFDBTMA1
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
PCN Part Status ChangeHalogen Free Upgrade 22/Aug/2013
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesCoolMOS™
PackagingCut Tape (CT)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Rds On (Max) @ Id, Vgs1.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) @ Vgs10nC @ 10V
Input Capacitance (Ciss) @ Vds262pF @ 100V
Power - Max28.4W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD65R1K4CFDBTMA1
Related LinksIPD65R1K, IPD65R1K4CFDBTMA1 Datasheet, Infineon Technologies Distributor
IPD65R1K4CFDBTMA1 Details Description
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