Renesas Electronics America NP82N04PDG-E1-AY

NP82N04PDG-E1-AY picture photo
Mfg. Part Number
NP82N04PDG-E1-AY
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 40V 82A TO-263
Datasheet Download
NP82N04PDG-E1-AY.pdf
Availability of NP82N04PDG-E1-AY

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of NP82N04PDG-E1-AY, we specialize in Renesas Electronics America all series electronic components. NP82N04PDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP82N04PDG-E1-AY, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NP82N04PDG-E1-AY Order Process
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Specifications of NP82N04PDG-E1-AY
Internal Part NumberEIS-NP82N04PDG-E1-AY
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 28/Aug/2013
PCN Assembly/OriginWafer Fabrication Site Change 10/Oct/2013
EDA / CAD ModelsDownload from Accelerated Designs
Standard Package800
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Rds On (Max) @ Id, Vgs3.5 mOhm @ 41A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) @ Vgs150nC @ 10V
Input Capacitance (Ciss) @ Vds9000pF @ 25V
Power - Max1.8W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NP82N04PDG-E1-AY
Related LinksNP82N04P, NP82N04PDG-E1-AY Datasheet, Renesas Electronics America Distributor
NP82N04PDG-E1-AY Details Description
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