ON Semiconductor NSB13211DW6T1G

NSB13211DW6T1G picture photo
Mfg. Part Number
NSB13211DW6T1G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS NPN/PNP PREBIAS 0.23W SC88
Datasheet Download
NSB13211DW6T1G.pdf
Availability of NSB13211DW6T1G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of NSB13211DW6T1G, we specialize in ON Semiconductor all series electronic components. NSB13211DW6T1G can be shipped within 24 hours after order. If you have any demands for NSB13211DW6T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSB13211DW6T1G Order Process
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Specifications of NSB13211DW6T1G
Internal Part NumberEIS-NSB13211DW6T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 19/Dec/2008
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k, 10k
Resistor - Emitter Base (R2) (Ohms)4.7k, 10k
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V / 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max230mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSB13211DW6T1G
Related LinksNSB1321, NSB13211DW6T1G Datasheet, ON Semiconductor Distributor
NSB13211DW6T1G Details Description
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