ON Semiconductor NSVMUN5132T1G

NSVMUN5132T1G picture photo
Mfg. Part Number
NSVMUN5132T1G
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS PNP 202MW SC70-3
Datasheet Download
NSVMUN5132T1G.pdf
Availability of NSVMUN5132T1G

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.04811
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of NSVMUN5132T1G, we specialize in ON Semiconductor all series electronic components. NSVMUN5132T1G can be shipped within 24 hours after order. If you have any demands for NSVMUN5132T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSVMUN5132T1G Order Process
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Specifications of NSVMUN5132T1G
Internal Part NumberEIS-NSVMUN5132T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationGreen Compound Update 04/Mar/2015
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max202mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSVMUN5132T1G
Related LinksNSVMUN, NSVMUN5132T1G Datasheet, ON Semiconductor Distributor
NSVMUN5132T1G Details Description
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