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ON Semiconductor NSVMUN5312DW1T3G

NSVMUN5312DW1T3G picture photo
Mfg. Part Number
NSVMUN5312DW1T3G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS NPN/PNP 50V BIPO SC88-6
Datasheet Download
NSVMUN5312DW1T3G.pdf
Availability of NSVMUN5312DW1T3G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.08293
Our Price
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EIS Components is the stocking Distributor of NSVMUN5312DW1T3G, we specialize in ON Semiconductor all series electronic components. NSVMUN5312DW1T3G can be shipped within 24 hours after order. If you have any demands for NSVMUN5312DW1T3G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSVMUN5312DW1T3G Order Process
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Specifications of NSVMUN5312DW1T3G
Internal Part NumberEIS-NSVMUN5312DW1T3G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package10,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)22k
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSVMUN5312DW1T3G
Related LinksNSVMUN53, NSVMUN5312DW1T3G Datasheet, ON Semiconductor Distributor
NSVMUN5312DW1T3G Details Description
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