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Toshiba Semiconductor & Storage RN1105MFV,L3F

RN1105MFV,L3F picture photo
Mfg. Part Number
RN1105MFV,L3F
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 0.15W VESM
Datasheet Download
RN1105MFV,L3F.pdf
Availability of RN1105MFV,L3F

Available Quantity

14402 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.04740
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1105MFV,L3F, we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1105MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1105MFV,L3F, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1105MFV,L3F Order Process
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Specifications of RN1105MFV,L3F
Internal Part NumberEIS-RN1105MFV,L3F
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingCut Tape (CT)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1105MFV,L3F
Related LinksRN1105, RN1105MFV,L3F Datasheet, Toshiba Semiconductor & Storage Distributor
RN1105MFV,L3F Details Description
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